BusinessKorea reports that Apple will switch from using TLC (triple-level cell) NAND flash to MLC (multi-level cell) NAND flash in the iPhone 6 and iPhone 6 Plus. The reported move comes following a number of users complaints that they experienced crashes and boot loops with the high capacity models of both handsets.
Sources have told the paper that flash memory firm Anobit, which Apple acquired in 2011, is to blame for the manufacturing defects. Apple will reportedly switch to MLC NAND flash for the 64GB iPhone 6 and the 128GB iPhone 6 Plus, and will also address crashing and boot loop issues with the release of iOS 8.1.1. Apple previously used MLC NAND flash in previous-generation iPhones.
BusinessKorea writes that: “TLC NAND flash is a type of solid-state NAND flash memory that stores three bits of data per cell. It can store three times as much data as single-level cell (SLC) that stores one bit of data, and 1.5 times as much as multi-level cell (MLC) solid-state flash memory that stores two bits of data. On top of that, TLC flash is more affordable. However, it is also slower than SLC or MLC in reading and writing data.”
Users who are experiencing an unusual amount of crashes and boot loops on their iPhone 6 or iPhone 6 Plus are recommended to take their devices to an Apple Retail Store for a replacement.
Apple recently seeded an iOS 8.1.1 beta to developers, however it is unknown if the update includes fixes for the crashing and boot loop bugs.
